Nsɛnnennen Titiriw a ɛwɔ Radiation-Hardened Crystal Oscillators mu: Wɔ-Nhwehwɛmu a emu dɔ a ɛfa Total Ionizing Dose ne Single-Event Effects ho

Nsɛm a Wɔaka abom: Crystal Oscillators a Ɛyɛ Pɛpɛɛpɛ wɔ Radiation Nneɛma a Atwa Yɛn Ho Ahyia Mu

Sɛ́ "koma bɔ" a ɛwɔ ɛlɛtrɔnik nhyehyɛe mu no, ahwehwɛ a ɛwosow no hyia nsɛnnennen soronko wɔ mmeae a mframa a ɛbɔ kɛse -. Wɔn mu titiriw yɛ piezoelectric crystals ne precision oscillation circuits, a ɛnam akwan horow so yɛ wɔn ade wɔ radiation ho, nanso awiei koraa no mmuae abien no nyinaa da adi wɔfrequency a ɛyɛ den, a ɛyɛ adwumayɛ ho sɛnkyerɛnne titiriw. Wɔakyekyɛ mframa a ano yɛ den nkɛntɛnso mu titiriw ayɛ no akuw abien:total ionizing dose (TID) nkɛntɛnsoa ɛma nneɛma sɛe nkakrankakra, nabiako-asɛm a esii nkɛntɛnso (HWƐ) .ɛno de huammɔdi ahorow ba mpofirim.

Ɔfã 1: Total Ionizing Dose Effect – "Mpanyin a Ɛtra Hɔ Daa" a ɛwɔ Crystal Oscillators mu

1.1 Nneɛma a wɔsɛe no a wɔaboaboa ano wɔ Crystal no ankasa so

Ionizing dose effect no nyinaa fi ahoɔden a ɛboaboa ano wɔ ionizing radiation a wɔde di dwuma bere tenten ase, na ɛde ɔsɛe ahorow abien titiriw ba quartz crystals so:

Lattice Mfomso ahorow a Wɔyɛ no Nkɔso

Mframa a ɛma nneɛma tu kɔ baabi foforo no sɛe wɔ ahwehwɛ no mu, na ɛma atɔm ahorow no fi wɔn lattice gyinabea ahorow no mu

Mfomso te sɛ mmeae a ɛda hɔ kwa ne atom ahorow a ɛwɔ ntam no boaboa ano bere kɔ so

Saa sintɔ ahorow yi sesa ahwehwɛ no elastic constants ne mass loading effects

Nkɛntɛnso tẽẽ:nhyehyɛe mu resonant frequency nsakraenedistortion a ɛwɔ frequency-ɔhyew su curve no mu

Charge Accumulation wɔ Surfaces ne Interfaces so

Ionizing radiation ma ahoɔden a ɛyɛ pintinn ba ahwehwɛ ani ne electrode ntam

Charge a wɔboaboa ano no sesa hye tebea horow a ɛwɔ ahwehwɛ no ani

Ɛma acoustic wave propagation loss ne apete kɔ soro

Nkɛntɛnso tẽẽ:tew a ɛba wɔ quality factor (Q value) mu .nephase dede a ɛsɛe

1.2 Nsunsuansoɔ a ɛkɔ so wɔ Oscillation Circuits so

Nneɛma a ɛyɛ nnam ne nea ɛnyɛ adwuma wɔ oscillation circuits mu no sɛe bere a dose boaboa ano no:

Parameter Drift a ɛfa mfiri a ɛyɛ adwuma ho

Systematic drift a MOSFET threshold voltage, sesa bias point a ɛwɔ oscillation circuit no mu

Transistor transconductance a ɛso tew, na ɛma loop gain margin so tew

Nkɛntɛnso tẽẽ:ɔhaw a ɛwɔ mfiase mu, attenuation a ɛba wɔ output amplitude mu, neoscillation gyae wɔ nsɛm a emu yɛ den mu

Nkɔanim a ɛkɔ soro wɔ Leakage Current mu

Oxide-trapped charges ma leakage current kɔ soro wɔ PN junctions ne gates mu

Nkɔanim kɛse wɔ static tumi a wɔde di dwuma wɔ ɔmansin no mu

Ɔhyew dede a ɛkɔ soro ne phase dede adwumayɛ a ɛsɛe

Nkɛntɛnso tẽẽ:tumi a wɔde di dwuma a ɛboro nea wɔakyerɛ sonedede fam a ɛkɔ soro

Parameter Nsakrae wɔ Feedback Networks mu

Radiation-sensitive parameters a ɛwɔ adesoa capacitors ne resistors mu no sesa

Sesa phase shift tebea horow a ɛwɔ oscillator no mu

Nkɛntɛnso tẽẽ:mfinimfini frequency offsetneshrinkage a ɛba wɔ tuning range mu

Ɔfa 2: Adeyɛ Baako-Event Effect – "Koma a Ɛyare Mpofirim" a ɛwɔ Crystal Oscillators mu

2.1 Nsunsuansoɔ tẽẽ a ɛwɔ Crystal Units so

Bere tiaa mu Displacement Damage

Ahoɔden a ɛkorɔn-ahoɔden ade biako pɛ (ion a emu yɛ duru anaa proton a ahoɔden kɛse-wɔ) hyɛn ahwehwɛ no mu

Ɔbɔ localized lattice ɔsɛe wɔ particle no trajectory no so

Ɛde bere tiaa mu adwennwen mu nsakrae a ɛba wɔ baabiara ba

Nkɛntɛnso tẽẽ:frequency jump a ɛba ntɛm ara, a ebia ne fã bi bɛsan ayɛ yiye wɔ ɛno akyi

Charge Deposition Nkɛntɛnso

Nneɛma nketenkete de ahoɔden gu ahwehwɛ no mu, na ɛyɛ anyinam ahoɔden a ɛtra hɔ bere tiaa bi

Wɔdanee no bere tiaa mu mfiridwuma mu nhyɛso denam piezoelectric nkɛntɛnso no so

Nkɛntɛnso tẽẽ:phase ahuruhuruwneɔsɛe kɛse a ɛba bere tiaa-bere mu mpɛn dodow a ɛyɛ den no mu

2.2 Ntwitwiridii a ɛba ntɛm ara wɔ Oscillation Circuits mu

Single-Event Transient (SET) wɔ Analog Circuits mu

Ahoɔden nketenkete a ɛkorɔn-bɔ amplifier anaa bias circuit no wɔ oscillator no mu

Yɛ bere tiaa mu mprempren pulses wɔ anyinam ahoɔden nhama anaa sɛnkyerɛnne nhama so

Pulse trɛw fi picoseconds du du kosi microseconds pii

Nkɛntɛnso tẽẽ:

Superimposed instantaneous glitches wɔ output asorɔkye no so

Phase continuity a wɔtwa mu mpofirim

Fase-locked loop (PLL) a ɛbɛtumi ayera wɔ lock anaa dɔn no synchronization huammɔdi mu

Single-Event Upset (SEU) wɔ Control Logic mu

Bit flipping ba wɔ dijitaal control afã horow mu (sɛ nhwɛso no, frequency tuning registers, mode control nsɛmfua) .

Wɔsesa nhyehyeɛ parameters no mpofirim

Nkɛntɛnso tẽẽ:

Output frequency huruw kɔ bo a ɛnteɛ so

Ɔkwan a wɔfa so yɛ adwuma a wɔsakra no a ɛnteɛ

Ebia ebehia sɛ wɔsan hyehyɛ no bio na ama wɔasan de adwumayɛ aba

Ɔsɛeɛ a ɛfiri Baako-Event Latchup (SEL) mu ba .

Wɔkanyan PNPN nhyehyɛe a ɛyɛ parasitic, na ɛyɛ mprempren kwan kɛse bi

Mprempren kɔ soro kɛse (ebetumi aboro bo a wɔtaa de di dwuma no mmɔho 100) .

Nkɛntɛnso tẽẽ:

Ɔmansin no dwumadi huammɔdi koraa

Ebia ɔhyew a wɔde guan no bɛma wɔasɛe ade daa

Power cycling yɛ ahyɛde na ama wɔasan anya ahoɔden

Ɔfã 3: Ahobammɔ Ho Akwan Titiriw a Wɔde Ma Crystal Oscillators

3.1 Nneɛma Titiriw a Wɔde Tia Ionizing Dose Nkɛntɛnso Nyinaa

Nneɛma a Wɔde Yɛ Ahwehwɛ a Wɔapaw no Yiye

Fa radiation-ahwehwɛ a ayɛ den tom: s.e., SC-cut quartz da mframa a ɛko tia yiye adi sen AT-cut quartz

Akwan titiriw a wɔfa so yɛ adwuma: hydrogen annealing ne akwan foforo a wɔfa so tew ahwehwɛ mu sintɔ ahorow a edi kan no so

Nneɛma foforo a wɔhwehwɛ: nneɛma foforo te sɛ lithium niobate phosphate (LNB) da adwumayɛ a ɛkorɔn adi wɔ frequency band ahorow bi mu

Hardened Circuit Nsusuwii a Wɔde Yɛ Adwuma

Fa semiconductor mfiri a wɔde radiation-hardened processes ayɛ di dwuma

Design redundant bias circuits sɛnea ɛbɛyɛ a ɛbɛtua threshold voltage drift no so ka

Fa tolerance design di dwuma de hwɛ hu sɛ ɛyɛ adwuma sɛnea ɛsɛ wɔ parameter drift range no mu

Fa leakage current monitoring ne compensation circuits ka ho

Nhyehyɛe a Wɔyɛ no Yiye

Yɛ crystal packaging yie na ama radiation-nneɛma a ɛyɛ mmerɛw a wɔde bedi dwuma no ayɛ ketewa

Tu mpɔn wɔ electrode nhyehyɛe ne nkitahodi akwan so na ama wɔatew interfacial charge a ɛboaboa ano no so

Fa nneɛma titiriw a wɔde kata so gu so na ama nsunsuanso a ɛwɔ soro no so atew

3.2 Ano aduru Titiriw a ɛfa Asɛm a Ɛsisii Baako-Nsunsuansoɔ ho

Architectural-Level Ɔmansin Ahobammɔ

Fa filtering ne hysteresis circuits di dwuma wɔ analog akwan a ɛho hia mu

Fa triple modular redundancy (TMR) ne bere ne bere mu refreshing ma dijitaal control afã horow

Yɛ akwan a wɔfa so hu nneɛma ntɛmntɛm na wɔsan nya ahoɔden

Fa mfomso a wohu ne nteɛso (EDAC) coding di dwuma de bɔ nhyehyɛe data ho ban

Layout Design a Wɔyɛ no Yiye

Fa awɛmfo nkaa atwa nodes a ɛyɛ mmerɛw ho ahyia ka ho

Fa common-centroid nhyehyeɛ tom na ama gradient nsunsuansoɔ ayɛ ketewa

Yɛ tumi kyekyɛ ntam nkitahodi ahorow no yiye na ama latchup a ɛyɛ mmerɛw no so atew

Fa mfiri akɛse di dwuma ma transistors a ɛho hia na ama charge a ɛho hia no akɔ soro

System-Level Mitigation Akwan a Wɔfa so Yɛ

Yɛ multi-oscillator architecture a ɛho nhia a ɛboa hot swapping

Fa real-bere frequency monitoring ne anomaly detection di dwuma

Yɛ adaptive algorithms a wɔde bɛhunu na wɔatua bere tiaa mu nsunsuansoɔ

Hyehyɛ wɔ-orbit siesie akwan so, a parameter retuning ne mfomsoɔ a wɔsan nya ka ho

3.3 Ahwehwɛdeɛ titire a ɛfa Sɔhwɛ ne Nhwehwɛmu a Wɔagye atom ho

Akwan a Wɔfa so Sɔ Mframa Sɔhwɛ Ma Crystal Oscillators

Bere tenten-hwɛ a wɔhwɛ mpɛn dodow a ɛyɛ den so: susuw sɛnea nneɛma sɛe no ho wɔ total ionizing dose effect ase

Real-bere susuw a ɛfa phase dede ho: hwehwɛ su ahorow a ɛwɔ bere tiaa mu nsunsuanso mu

Wɔ-beam sɔhwɛ mu: yɛ nsunsuanso ankasa a ɛwɔ adeyɛ biako-nsunsuanso mu ho mfonini

Nkwa sɔhwɛ a wɔyɛ no ntɛmntɛm: hyɛ bere tenten- ahotoso ho nkɔm

Parameters Titiriw a Wɔde Wɔn Adwene So Wɔ Sɔhwɛ Mu

Abusuabɔ curve a ɛda frequency offset ne total ionizing dose ntam

Nsonsonoe su ahorow a ɛwɔ phase dede spectrum mu

Bere a wɔde fi ase ne bere a wɔde gyina pintinn no a wɔsɛe no

Tumi a wotumi kura output waveform integrity mu

Awiei: A Systems Engineering a Ɛfa Kari pɛ ne Nneɛma a Ɛyɛ Fɛ Ho

Radiation hardening of crystal oscillators yɛ nhyehyɛe mfiridwuma a ɛhwehwɛ sɛ wɔyɛ aguadi-offs wɔ level ahorow pii so:

Nneɛma ne Nneɛma a Wɔyɛ no Ntam Kari pɛ

Trade-off ntam radiation resistance a crystal nneɛma ne frequency stability

Kari pɛ wɔ hardening level a semiconductor akwan ne tumi a wɔde di dwuma ne ahoɔhare ntam

Aguadi-offs wɔ Circuit Design mu

Kari pɛ a ɛda ahotoso mu nkɔso a efi redundancy ahobammɔ ne nkɔanim a ɛyɛ den ne tumi a wɔde di dwuma ntam

Di gua-off wɔ ahobanbɔ nhyehyɛe ahoɔden ne ɛka ne kɛse anohyeto ahorow ntam

System Architecture a Wɔyɛ no Yiye

Nhyehyɛɛ a wɔbom yɛ a ɛfa ahobanbɔ a ɛwɔ multi-level ho

Hardware-software a wɔaka abom mfomso-abodwokyɛre akwan

Intanɛt so nhwehwɛmu ne nsakrae a wɔyɛ no sɛnea wɔpɛ a wɔde bɛka abom

Awiei koraa no, radiation-hardened crystal oscillator nhyehyeɛ a ɛdi mu no gyina nteaseɛ a ɛyɛ pɛpɛɛpɛ a ɛfa dwumadie tebea pɔtee no ho, ne adwumayɛ, ahotosoɔ, ne ɛka a wɔsusu ho yie. Ɛnam sɛ wɔreyɛ nneɛma foforɔ, akwan a ɛkɔ anim, ne nyansa a wɔde tua ka ho nhyehyɛeɛ nti, ahwehwɛ a ɛwosow wɔ mframa a ano yɛ den mu no adwumayɛ bɛkɔ anim bio, na ɛbɛma wɔanya berɛ ho nhwɛsoɔ fapem a ɛyɛ den ama mfuo a wɔtumi de ho to so kɛseɛ te sɛ ahunmu a emu dɔ a wɔhwehwɛ ne nuklea ahoɔden a wɔde di dwuma.

Saa nhwehwɛmu ne ahobammɔ akwan a wɔde wɔn ani asi so yi hwɛ hu sɛ nhyehyɛe no "koma bɔ" kɔ so gyina na wotumi de ho to so wɔ mframa a ano yɛ den mpo mu.